(l.ii,.u <^s.mi-dondactoi lpioducti, line, s tj 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n6765/2n6766 n-channel power mosfets, 30 a,150 v/200 v description tries* devices are n-channel. enhancement mode, power mosfets designed especially for high power, high sp?ed applications, such as switching power supplies, ups, ac and dc motor controls, relay and solenoid driver and high energy pulse circuits. vqs hated at 80 v silicon gate lor fast switching sp?ed? loss, rds specified at elevated temperature) rugged low drive requirement* eaie of paralleling maximum rating* 2n6765 2n6766 symbol vdss vdgr vas tj, t8ts tl characteristic drain to source voltage drain to gate voltage rss-1 msi qate to source voltage operating junction and storage temperatures maximum lead temperature tor soldering purposes, 1/16* from case for 10 a hating 2N8768 200 200 20 -55 to +150 300 rating 2n6765 150 150 120 -55 to +150 300 unit v v v ?c ?c maximum on-state characteristics fusion) b iom static drain-to-source on resistance drain currant continuous at tc - 25c continuous at tc - loo'c pulsed 0.065 30 19 eo2 0-12 25 16 so2 ji a maximum thermal characteristics rsuc pc thermal resistance, junction to case total power dissipation at tc - 25'c at tc-100-c linear derating factor 0.85 150 60 1.2 0.83 150 60 1.2 ?c/w w wrc n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
2n6765/2n6766 electrical characteristics (tc - 25"c unless otherwise noted) symbol characteristic uln max unit 1 text conditions oft characteristic* v(bh]dss loss ic6s drain sourca breakdown voltage 2n6766 2n8765 zero gate voltage drain currant gate-body leakage current 2002 150* 1 4 100 v ma na ves-0 v, id -i.o ma vm - hated vdss, vgs - o v vqs = rated vdss, vgs - o v. tc - 125'c vgs-*20 v, vd3-0 v on charact?rl*lle< v<3s(th) r08tan) vds(m) 9l> gate threshold voltage static drain-source on-raslstance1 2n6798 2n6765 2n6766 pn6765 drain-source on-voltage1 2n6766 2n6765 forward transccnductance1 2.0 9,0 4.0 o.ob5 0.12 0.1 63 0.218 2.7 3.0 27 v n v s(u) i0 -1.0 ma. vds.-vgs vos - 10 v, i0=19 a i0-16 a lo=ie a. tc = 12s'c b-16 a. tc-1zs*c voa-10 v ip - 30 a id- 25 a vos-15 v, id -19 a dynamic characteristic* cis, c(|s9 c? input capacitance output capacitance reverse transfer capacitance 100q 460 1sq 3000 1200 500 pf pf pf vdj = 25 v, vgs - 0 v 1=1.0 mhz switching characteristics oc-25*c, figure* 9. 10) tdfon) t, ?d{l)h) t( qb turn-on delay time rise time turn-off delay time fall time total gate ohtirgft 35 100 125 100 iao2 ns ns ns na nc v00 = 9s v, id -19 a vgs -10 v, hgen = 4.7 il ros-4-7 j2 vqs-10 v, id -38 a vdd-ioo v electrical characteri?tlc? (cont.) (tc - 25"c unless otherwise noted) symbol [ cn?r?ct?rl?tle mln typ max unit test conditions source-drain dlod* characterlatlci is ism vsd ^ qrr continuous source currant 2n6766 2n6765 pulsed source current 2n6766 2n6765 diode forward voltage 2n6766 2ns76s ravarse recovery time reverse recovery charge 0.9 0,85 soo2 102 30 25 eoz so2 1.b 1.7 a a v na cc vgs " 0 v ls - 30 a is - as a vss-o v, tj-150'c !f-w dlf/dt-100 a/mb vgs-o v, tj-1bo'c if - w dlp/dt - 100 a//js
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